 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| APT8011JLL 800V 51A 0.110 POWER MOS 7 (R) R MOSFET G S D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 SO ISOTOP (R) 2 T- 27 "UL Recognized" D * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package G S All Ratings: TC = 25C unless otherwise specified. APT8011JLL UNIT Volts Amps 800 51 204 30 40 694 5.56 -55 to 150 300 51 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 800 0.110 100 500 100 3 5 (VGS = 10V, 25.5A) Ohms A nA Volts 2-2004 050-7093 Rev A Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8011JLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 51A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 51A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V ID = 51A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 533V, VGS = 15V ID = 51A, RG = 5 MIN TYP MAX UNIT 9480 1890 340 650 100 525 23 23 83 19 1390 1545 2095 1800 J ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns C 51 204 1.3 1000 34 10 (Body Diode) (VGS = 0V, IS = -ID51A) Reverse Recovery Time (IS = -ID51A, dl S /dt = 100A/s) Reverse Recovery Charge (IS = -ID51A, dl S/dt = 100A/s) Peak Diode Recovery dv/ dt 5 Q V/ns THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25C, L = 2.77mH, RG = 25, Peak IL = 51A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID51A di/dt 700A/s VR 800V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 , THERMAL IMPEDANCE (C/W) 0.16 0.9 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 2-2004 050-7093 Rev A Z JC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves 160 ID, DRAIN CURRENT (AMPERES) APT8011JLL 140 120 100 80 60 40 20 4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V GS 6V VGS =15 & 10V 5.5V RC MODEL Junction temp. (C) 0.0375 Power (watts) 0.142 Case temperature. (C) 0.751F 0.0554F 5V 4.5V 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 140 120 100 80 TJ = -55C 60 40 20 0 TJ = +25C TJ = +125C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE NORMALIZED TO = 10V @ 25.5A ID, DRAIN CURRENT (AMPERES) 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 0 20 40 60 80 100 120 140 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 60 50 40 30 20 10 0 25 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) I D 1.15 ID, DRAIN CURRENT (AMPERES) 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 = 25.5A = 10V V GS 2.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.1 1.0 1.5 0.9 1.0 0.5 0.7 0.6 -50 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7093 Rev A 2-2004 0.8 APT8011JLL 204 ID, DRAIN CURRENT (AMPERES) 30,000 OPERATION HERE LIMITED BY RDS (ON) 100 50 100S C, CAPACITANCE (pF) 10,000 Ciss 10 5 1mS Coss 1,000 10mS TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I D Crss 100 = 51A IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 12 VDS= 160V VDS= 400V 8 VDS= 640V 4 TJ =+150C TJ =+25C 10 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 350 300 250 V DD G 0 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120 V DD G 1 = 533V R = 5 td(off) 100 80 tr and tf (ns) T = 125C J L = 100H tf td(on) and td(off) (ns) = 533V 200 150 100 50 0 10 R = 5 T = 125C J L = 100H 60 40 20 td(on) 40 50 60 70 80 ID (A) FIGURE 14, DELAY TIMES vs CURRENT DD G tr 20 30 20 30 40 50 60 70 80 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 14,000 V DD 0 10 4000 3500 SWITCHING ENERGY (J) V = 533V = 533V R = 5 T = 125C J 12,000 SWITCHING ENERGY (J) I D J = 51A T = 125C L = 100H EON includes diode reverse recovery. 3000 2500 2000 1500 1000 L = 100H E ON includes diode reverse recovery. Eoff 10,000 8,000 6,000 4,000 Eon 2-2004 Eoff 500 40 50 60 70 80 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 10 20 30 Eon 2,000 0 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5 050-7093 Rev A Typical Performance Curves APT8011JLL 10% Gate Voltage TJ = 125C td(on) tr td(off) 90% Gate Voltage TJ = 125C Drain Current 90% 90% tf 5% DrainVoltage 10% DrainVoltage 5% Switching Energy 10% Drain Current Switching Energy 0 Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT30DF60 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. * Source Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. Gate APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7093 Rev A 2-2004 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) |
Price & Availability of APT8011JLL04
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |